发明名称 |
THIN FILM CAPACITOR |
摘要 |
A thin film capacitor is formed of a thin crystalline electrically insulative or semiconductive substrate. With the insulative substrate a thin conductive metal layer is deposited on the substrate and a thin film of a crystalline strontium barium niobate deposited on the thin conductive metal layer so that its 2.77 ANGSTROM spaced atomic planes are oriented in a non-perpendicular manner to the substrate and an additional thin conductive layer is deposited on the surface of the strontium barium niobate film. When a semiconductive substrate is employed the strontium barium niobate film is deposited directly on the substrate. These capacitors exhibit a low temperature coefficient of capacitance and a high capacitance density. |
申请公布号 |
AU6685786(A) |
申请公布日期 |
1987.06.25 |
申请号 |
AU19860066857 |
申请日期 |
1986.12.22 |
申请人 |
PHILIPS'GLOEILAMPENFABRIEKEN, N.V. |
发明人 |
AVNER SHAULOV;WALTER KARL ZWICKER;MYRON FROMMER;STANLEY LUKASIK |
分类号 |
H01G4/18;H01G4/008;H01G4/12;H01L21/02 |
主分类号 |
H01G4/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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