发明名称 THIN FILM CAPACITOR
摘要 A thin film capacitor is formed of a thin crystalline electrically insulative or semiconductive substrate. With the insulative substrate a thin conductive metal layer is deposited on the substrate and a thin film of a crystalline strontium barium niobate deposited on the thin conductive metal layer so that its 2.77 ANGSTROM spaced atomic planes are oriented in a non-perpendicular manner to the substrate and an additional thin conductive layer is deposited on the surface of the strontium barium niobate film. When a semiconductive substrate is employed the strontium barium niobate film is deposited directly on the substrate. These capacitors exhibit a low temperature coefficient of capacitance and a high capacitance density.
申请公布号 AU6685786(A) 申请公布日期 1987.06.25
申请号 AU19860066857 申请日期 1986.12.22
申请人 PHILIPS'GLOEILAMPENFABRIEKEN, N.V. 发明人 AVNER SHAULOV;WALTER KARL ZWICKER;MYRON FROMMER;STANLEY LUKASIK
分类号 H01G4/18;H01G4/008;H01G4/12;H01L21/02 主分类号 H01G4/18
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