发明名称 MANUFACTURE OF THIN FILM SEMICONDUCTOR DEVICE
摘要 PURPOSE:To omit a patterning process of a back surface electrode and to decrease man-hours in laser cutting machining, by ensuring the maintenance of an interval between a second electrode and a semiconductor layer in an adjacent region. CONSTITUTION:On the pattern of a surface electrode 2, which is formed on a glass substrate 1, an amorphous silicon layer 30 is formed. Thereafter, the amorphous silicon layer is cut into equal strip parts with YAG laser. At this time the laser light input direction 6 is set to that an incident angle of 45 deg. is provided with respect to the glass substrate 1 as shown by arrows 6. The shape of the cross section of a cutting region 7, which is shown by a shaded area in the amorphous silicon layer 30, is slanted by 45 deg. with respect to the substrate. Finally, aluminum is evaporated to a thickness of 300nm in an evaporating direction 5 so as to form a right angle with slant end surfaces 31 and 32 of divided amorphous silicon layer 3. Thus, the amorphous silicon solar battery can be manufactured without the laser cutting of a metal film.
申请公布号 JPS62142368(A) 申请公布日期 1987.06.25
申请号 JP19850283920 申请日期 1985.12.17
申请人 FUJI ELECTRIC CO LTD 发明人 ASANO AKIHIKO
分类号 H01L31/04;H01L27/142 主分类号 H01L31/04
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