| 摘要 |
PURPOSE:To obtain a film of high quality with a very small number of crystal defects, by evaporating germanium on a silicon surface, and making the surface layer be a mixed crystal layer of silicon and germanium, and then vaporizing the mixed crystal to etch the silicon surface. CONSTITUTION:When a protective oxidizing film 21 on a surface is removed and then four or more atomic layers of germanium are laminated with a substrate temperature kept at 200 deg.C or more, the surface layer becomes a mixed crystal layer 40 of silicon and germanium. The mixed crystal layer 40 vaporizes with the substrate temperature being 900 deg.C or more, resultantly etching of the substrate surface layer being completed. Thus, very clean surface can be obtained, because contaminants such as carbon reserving on the surface are removed from the surface.
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