| 摘要 |
<p>PURPOSE:To provide a heat sink large in size for facilitating the handling of semiconductor devices, by forming a metal layer connected to an electrode and extended over the surface of an insulation film and forming a resin film around the metal layer before providing the heat sink consisting of a plated layer extended over the surface of the resin film. CONSTITUTION:A metal layer 10 connected to an electrode 2 is extended over an insulation film 3. A resin film 11 is formed to cover the peripheral region of said insulation film 3 and the exposed surface of a semiconductor substrate 1. After that, a metal-plated layer is provided such that it is connected to the metal layer 10 and extended over the resin film 11. This metal-plated layer functions as a heat sink 5. The metal-plated layer has a thickness similar to those of conventional ones, namely of about 50mum. As to the diameter, however, the sink 5 should have a diameter increased corresponding the relatively large area of the metal layer 10.</p> |
