| 摘要 |
PURPOSE:To obtain a polycrystalline semiconductor material having large crystal grains by holding a polycrystalline semiconductor material having small crystal grains in a heat-resistant container of a material having a near thermal expansion coefficient, heat-treating it through high-frequency heating under an inert atmosphere, and cooling it. CONSTITUTION:A plurality of recesses shaped in a flat plate are provided on a driver substrate 1 of graphite, ant after the respective inner walls of the recesses 2 are coated using silicon nitride as a die lubricant, sheet-shape polycrystalline silicon 3, 3 of low-quality is cut so as to fit the size of the recesses 2 and is held. The driver substrate 1 of graphite on which the semiconductor material is mounted in this way is heated to a predetermined temperature (about 1,400 deg.C), and after setting is made to heat a high-frequency coil 4 for heating to 1,400-1,600 deg.C, the driver substrate 1 is moved in the proceeding direction (arrow direction) at a rate of about 1mm/min. With this, the sheet- shaped materials 3 are sequentially heated and fused, and gradually cooled, obtaining a matured, high-quality polycrystalline semiconductor material 5 for wafers having large crystal grains.
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