| 摘要 |
The structured semiconductor body, in particular a doped and/or undoped Si substrate is first coated over the entire surface with an approximately 1 nm thick SiO2 layer. This layer is then structured by exposure to energy, for example focused laser light. Doped and/or undoped single-crystal silicon, which is bounded by polycrystalline silicon, is then deposited on these structures with the aid of differential SiMBE. |
