| 摘要 |
PURPOSE:To form a fine pattern having excellent dry etching resistance and high precision, and requiring shorter process time by shaping an inversion resist pattern and a coating-layer pattern on a substrate to be processed through a specified process and conducting etching. CONSTITUTION:A resist pattern 12, which has weak dry etching resistance and negative and positive thereof are inverted, is formed onto a substrate 11 to be processed, and a coating layer 13 sufficient for coating the inversion resist pattern 12 and having strong dry etching resistance is shaped. The coating layer 13 is dry-etched to remove the surface layer of the coating layer, and the inversion resist pattern 12 having weak dry etching resistance is exposed. The inversion resist pattern 12 and the surface layer of the coating layer 13 are etched, and a removed and shaped coating-layer pattern 13' is exposed by ultraviolet rays 14. Consequently, a dry etching process can be shortened. Since a curing effect by far ultraviolet exposure appears in the coating-layer pattern, the film of the coating-layer pattern 13' is not reduced on the removal of the inversion resist pattern 12, thus forming a fine pattern having high accuracy and strong dry etching resistance.
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