Insulated gate transistor with latching inhibited.

摘要

An insulated gate transistor (70) modified to increase its latching current density. On one side of gate (22), a high conductivity collector well (76) is provided to divert current which would otherwise flow through collector well (24) in a critical path (50) along source-collector junction (27), tending to forward bias the junction and cause the transistor to latch.