| 摘要 |
Photo resist image layers, particularly those used for high resolution geometries in microelectronic applications, are stabilized against distortion or degradation by the heat generated during subsequent etching, ion implantation processes and the like, by the application of a film of a thermally stabilizing agent prior to post-development bake of the image layer. The process serves to achieve thermal stabilization of the photoresist image layer without significantly affecting the ease of subsequent stripping of the layer. It is particularly effective when used to thermally stabilize positive resist images derived from photoresist systems based on novolak resins. |
