| 摘要 |
PURPOSE:To reduce noises, and to improve an SN ratio by reducing the fluctuation in output potential resulting from the cross-over capacitance of an output line from a thin-film transistor integrated type line sensor and a signal line from a shift register. CONSTITUTION:Source terminals for each thin-film transistor 4 for switching, drain terminals thereof are connected respectively to sensors 2, are connected to ground potential through capacitances. The source terminals are connected to a command output line 3. Consequently, the fluctuation of output potential resulting from the cross-over capacitances of the output line 3 and signal lines from a shift register 1 is relaxed, thus improving the S/N ratio of signals. That is, when capacitances C1 are added among each sensor and ground potential, the cross-over capacitances of respective sensor 2 and each capacitance given to the cross-over capacitances approach in a distance even when there is ununiformity with location in the film thickness of a gate insulating film, thus resulting in the same design value as the ratio of capacitances, then inhibiting potential fluctuation as noises.
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