| 摘要 |
PURPOSE:To shorten the treatment time, and to faciliate sheet-feed treatment while also adapting the titled manufacture to the increase in the aperture of an Si substrate by implanting phosphorus ions twice and annealing the whole by infrared rays. CONSTITUTION:A field oxide film 2, a gate oxide film 3 and a gate electrode 4 are formed to a P-type Si substrate 1. Phosphorus ions 5 are implanted to shape a source 6a and a drain 6b for a low-concentration MOS transistor. An silicon oxide film 7 is formed through a vapor phase method. The silicon oxide film is left as a side wall 8 only on the side wall section of the gate electrode through a reactive ion etching method. Phosphorus ions 9 are implanted again to shape a source 10a and a drain 10b for a high-concentration MOS transistor. The source 10a and the drain 10b are activated electrically by using an infrared lamp annealing method. Accordingly, the treatment time is shortened, sheet-feed treatment is also facilitated, and the titled manufacture can also be adapted to the increase in the aperture of the Si substrate 1 sufficiently.
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