| 摘要 |
PURPOSE:To prevent the disconnection of a metallic wiring by forming an insulating film, implanting ions, conducting wet etching and obtaining a contact hole having a desired shape. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1, and ions 3 are projected. A contact is patterned by a resist 4, and wet-etched slightly. Consequently, since ions are implanted previously, the upper section of the insulating film is side-etched rapidly, and corners take a smooth shape. The resist is removed through anisotropic etching by reactive ion etching. A metallic wiring 5 is shaped to the insulating film 2. Accordingly, the corners of a fine contact hole can be rounded, thus improving the metallic wiring 5 at edge sections, then preventing disconnection.
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