发明名称 |
AN ELECTRODE FOR A SEMICONDUCTOR DEVICE |
摘要 |
<p>A semiconductor device includes an electrode having triple-layer electrode structure or a multilayer interconnecting structure comprising a contact (a lower conductive) layer (17) of aluminum or its alloy which comes into contact with a silicon substrate (1), a barrier (18) of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g. tungsten), and a (upper) conductive layer (19) of aluminium or its alloy. The TiN-W barrier layer (18) prevents over-dissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature.</p> |
申请公布号 |
EP0127281(B1) |
申请公布日期 |
1987.06.24 |
申请号 |
EP19840301991 |
申请日期 |
1984.03.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
WATANABE, KIYOSHI;TAKEUCHI, TOHRU;OHTAKE HIDEAKI;FUJITA, ICHIRO |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L29/43;H01L29/45;(IPC1-7):H01L21/285;H01L29/40;H01L23/48;H01L21/60 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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