A monolithic integrated circuit, particularly of either the MOS or CMOS type, and method of manufacturing same.

摘要

A monolithic integrated circuit of either the MOS or CMOS type comprises an intermediate layer (8) of polycrystalline silicon, a layer (9) of a silicide of a refractory metal overlying said polycrystalline silicon layer (8), and regions (8a) of preset area and preset paths (9a) formed in the polycrystalline silicon layer (8) and the silicide layer (9); the preset area regions (8a) and preset paths (9a) forming respectively high resistivity resistances and low resistivity interconnection lines for an intermediate connection level.