| 摘要 |
PURPOSE:To form a deposited film having uniform characteristics over a wide area by bringing a gaseous raw material contg. chalcogenide atoms and gaseous halogen oxidizing agent into contact and using the formed precursors in the excited state as a supply source. CONSTITUTION:Gaseous SeH2, etc., in a cylinder 101 and gaseous AsH3, etc., in a cylinder 102 as the gaseous raw material contg. chalcogenide atoms are introduced together with the gaseous halogen oxidizing agent such as gaseous F2 in a cylinder 106 into a vacuum chamber 102. These gaseous raw materials are mixed and bombarded to form the plural precursors contg. the precursors in the excited state. At least one of such precursors in used as the supply source for the film constituting element and the amorphous film such as AsxSe(1-x) (where x=0.42), etc., is deposited on a substrate 118. The film having excellent physical characteristics and high quality is formed with the conserved energy by the above-mentioned method. |
