| 摘要 |
PURPOSE:To make a light emitting spot small by reducing the leakage current from a cutout and restraining natural light emitting components by separating a cladding layer into a cladding layer on the active layer side and a current constriction layer. CONSTITUTION:On an N-type GaAs substrate 11, an N-type buffer layer 12, an N-type first cladding layer 13, a P-type active layer 14, and a second cladding layer 15 are laminated. This cladding layer 15 is composed of a current constriction layer 16 composed of an N-type third cladding layer 16a on the side of the active layer 14 and a GaAs layer 16b. On a wafer thus formed, a masking member having a stripe vertical to a cleavage direction is formed and the constriction layer 16 is selectively etched by use of an etching solution so as to form a cutout 17. Furthermore, a P-type light guiding layer 18 and an ohmic layer 20 are grown in order to fill the cutout 17. Then, the leakage current from the cutout 17 is reduced to make a light emitting spot small.
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