发明名称 Solid state imaging device and method with row-by-row charge transfer
摘要 A solid stage imaging device, in which photodiodes each capable of converting incident light into a electric charge and accumulating the electric charge are arranged regularly in a matrix, e.g. in horizontal and vertical directions, and electric charges of the photodiodes are sent to the outside by means of CCD's, includes a scanning circuit which scans switching MOS transistors for transferring the electric charges of the photodiodes to vertical CCD's, in a vertical direction so that switching MOS transistors in a row parallel to a horizontal direction can be driven independently of switching MOS transistors in another row. When the solid state imaging device is driven, an operation for transferring an electric charge in each vertical CCD and an operation for driving switching MOS transistors in the next row with the aid of the scanning circuit are alternately performed, to reduce the amount of smear and to increase the dynamic range of each vertical CCD, without increasing the number of CCD's used.
申请公布号 US4675887(A) 申请公布日期 1987.06.23
申请号 US19850736259 申请日期 1985.05.21
申请人 HITACHI, LTD. 发明人 AKIYAMA, TOSHIYUKI;KOIKE, NORIO;ITO, KENJI;OGINO, TAKESHI;NAGAHARA, SHUUSAKU
分类号 H01L27/14;H01L27/148;H04N5/335;H04N5/341;H04N5/355;H04N5/359;H04N5/3728;H04N5/374;(IPC1-7):G11C19/28;H01L29/78;H01L31/00 主分类号 H01L27/14
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