| 发明名称 |
Semiconductor purification by solid state electromigration |
| 摘要 |
The removal of residual impurities from semiconductor material is accomplished by solid state electromigration of the impurities from the semiconductor slice into a surrounding conductive liquid (e.g. Hg) which is maintained at a negative potential.
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| 申请公布号 |
US4675087(A) |
申请公布日期 |
1987.06.23 |
| 申请号 |
US19840636060 |
申请日期 |
1984.07.31 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TREGILGAS, JOHN H.;GNADE, BRUCE E. |
| 分类号 |
C23F1/00;C25F1/00;C30B33/00;H01L21/02;H01L21/306;(IPC1-7):C25F1/00 |
主分类号 |
C23F1/00 |
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