| 摘要 |
PURPOSE:To enable high integration of an element by forming the openings of inter-layer insulating film in the semiconductor surface, providing a collector electrode wiring, and bonding the insulator layer and the supporting substrate with an insulating bonding layer, thereby making the unit size of a transistor small. CONSTITUTION:In a semiconductor layer surrounded by an insulator element isolation region, an emitter region 5, a base region 4 and a collector contact region 6 are formed. And at the collector region side or the emitter region side 5, the semiconductor layer is formed on a supporting substrate 13 through an insulator layer, and an impurity diffusion region for collector is provided on the semiconductor surface between the semiconductor layer and the insulating layer. Then, the openings of inter-layer insulating films 7, 9 are formed, and a collector electrode is provided. With this, the collector wiring distance can be made small.
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