发明名称 |
Directed energy conversion of semiconductor materials |
摘要 |
Directed energy conversion of semiconductors by the directed energy fusion of a selective region of a semiconductor layer to provide a conductive path through the layer. A conductive path is formed through a semiconductive layer through opposed electrodes by conversion of the semiconductive region, for example, by laser energy applied to change the structure in the region extending between the electrodes. The change in conductivity of the path is monitored and used to control the formation of the conductive path by controlling the directed energy source.
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申请公布号 |
US4675467(A) |
申请公布日期 |
1987.06.23 |
申请号 |
US19860859505 |
申请日期 |
1986.04.05 |
申请人 |
CHRONAR CORP. |
发明人 |
VAN DINE, JOHN E.;WEAKLIEM, HERBERT A.;KISS, ZOLTAN;DELAHOY, ALAN E. |
分类号 |
H01L21/768;H01L27/142;H01L31/20;(IPC1-7):H01L27/14;H01L31/18 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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