| 摘要 |
PURPOSE:To prevent a remarkable dark portion from being formed in the central portion by providing electrodes in a semiconductor substrate provided with a stepped projection or the like having P-N junctions in the direction vertical to the substrate so as to enable the P-N junctions to be energized. CONSTITUTION:With the last masking being provided on a substrate in which a stepped projection is formed, an impurity such as Zn is diffused into the substrate from the portions such as side peripheral walls and horizontal portions of the stepped projection 2 except the top horizontal portion, forming P-N junctions on the diffusion fronts. Then, on step portions of the stepped projection having P-N junctions PN1 vertical to the substrate in the respective step portions obtained, electrodes E2, E1 composed of a thin film of Au or the like is provided by the vacuum deposition method or the like. At this time, as the horizontal portions of the stepped projection, if a light emitting diode is to be obtained, masking is applied to the upper surfaces except the projection, and the electrode films on the horizontal portions of the projection are eventually removed, obtaining a targeted light emitting device. |
