| 摘要 |
PURPOSE:To enable plasma etching without incomplete etching in a step part possible by impressing high-frequency power to electrodes facing each other to form plasma and automatically changing over the electrode polarities of the high-frequency power thereby inverting the polarities. CONSTITUTION:The lower electrode 1 to be imposed with a semiconductor wafer 4 and the upper electrode 2 are disposed to face each other. The high-frequency power is impressed by a high-frequency power sources 3 to the two electrodes to generate glow discharge by which a reaction seed is formed. The volatile resultant reaction product is formed on the surface of the above- mentioned wafer 4, by which plasma etching is executed. An electrode polarity inverting mechanism 7 is disposed between the above-mentioned power source 3 and the two electrodes of the plasma etching device constituted in the above- mentioned manner. The electrode polarities of the high-frequency power are thereby automatically changed over in accordance with the preliminary time setting or the signal from a mechanism 8 for detecting the end point of etching installed in the plasma 5 region. The incomplete etching in the step part is thereby prevented and the damage to the resist is decreased, by which the dimensional shift is suppressed.
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