| 摘要 |
A surface-emitting, light emitting device has a columnar active region of one direct bandgap semiconductor and an adjacent confining region of higher bandgap semiconductor. Contacts are made to the active and confining regions and a window is formed in the device in vertical alignment with the active region to permit light emission from the device. The semiconductors are doped to establish a pn junction within a carrier diffusion length of the heterojunction between the active and confining regions, the pn junction extending the length of the active region. In use, laser light is emitted along the axis of the columnar active region in response to current passing across the pn junction. The confining region is epitaxially grown with a compositional and refractive index periodicity causing Bragg distributed feedback (DFB) laser operation.
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