| 摘要 |
PURPOSE:To obtain the titled thin material with excellent Faraday rotation ability by forming a magnetic single crystal film of specified composition on the substrate of gadolinium-gallium-garnet wherein the parts of the Gd and Ga are respectively substituted for Ca and Mg and Zr. CONSTITUTION:The garnet single crystal substrate obtained by substituting the parts of the Gd and Ga of a gadolinium-gallium-garnet substrate respectively for Ga and Mg and Zr and having the composition shown by formula I is prepared. Then the magnetic single crystal film having the composition shown by formula II (R is Lu, Yb, Tm, Er, Ho, Dy, and Y, M is Al and Ga, 0<x<2, and 0<=y<0.5) is epitaxially grown on the substrate to obtain the desired magnetic garnet material for a magneto-optical element. Since the magnetic garnet material has a high Faraday rotation coefficient, the desired Faraday effect can be obtained. Furthermore, the temp. coefficient of the Faraday rotation coefficient is small, and the material is stable to temp. changes.
|
