| 摘要 |
PURPOSE:To effectively grow a large-area silicon carbide single crystal film of good quality having uniform film thickness by carrying out the growth under reduced pressure when the silicon carbide single crystal film is formed by chemical vapor growth. CONSTITUTION:A single crystal substrate 4 is arranged on a substrate heater 3 in a reaction vessel 1. The inside of the reaction vessel 1 is firstly evacuated to a high vacuum by a pump 5, then hydrogen carrier gas and hydrogen-diluted gaseous propane are introduced through a pipe 2, and a valve 6 is controlled to keep the pressure in the reaction vessel 1 at a specified vacuum. Then the substrate 4 is heated by the heater 3, hydrogen-diluted gaseous silane and hydrogen-diluted gaseous propane are introduced, and a silicon carbide single crystal is grown on the substrate 4. Consequently, since chemical vapor growth is carried out while the inside of the reaction vessel 1 is evacuated, the diffusion coefficient of the gas is increased, the film growth on the surface becomes a rate-determining step, and uniform film thickness can be obtained.
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