| 摘要 |
PURPOSE:To provide a wiring which withstands tensile force and to prevent breakdown in the wiring, by depositing a conductor material on the surface of a semiconductor by a well known method under the state convex warping is applied to a semiconductor substrate, and forming the wiring. CONSTITUTION:On a back surface of a semiconductor substrate 1, a film 3 having tensile stress (e.g., a film made of silicon oxide, PSG or the like by a normal pressure CVD method) is deposited by about 1mum. The forming method and the thickness of the film 3 having the tensile stress are determined in consideration of the warping amount of the surface 4 of the semiconductor substrate 1. A conductor material (e.g., Al alloy) is evaporated on the surface 4 by sputtering to a thickness of about 0.8mum under the state convex warping is yielded on the surface 4 of the semiconductor substrate 1. Then, a lower-layer wiring 5 is formed, and heat treatment is performed. In order to remove the film 3 on the back surface 2, photoresist 6 is rotationally applied on the surface 4 of the semiconductor substrate 1. Etching is performed by BHF. Thereafter, an Al two-layer interconnection structure is formed by a well known technology.
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