| 摘要 |
PURPOSE:To make it possible to form a high-performance, highly reliable wiring having excellent contact even by a CVD method, by providing a hole at a specified part in a silicon oxide film formed on the surface of a substrate, removing a natural silicon film on said substrate at said hold part by chemical action with a reacting gas, and depositing a conductor material. CONSTITUTION:A silicon oxide film 6 is deposited on the entire surface. Wet etching or dry etching is performed only on the upper part of an N-type diffused layer 5 and a phosphorus doped polysilicon layer 3, and a hole is formed. Then a P-type single crystal silicon substrate is introduced into the reaction chamber in a CVD apparatus. A gas (e.g., C3F8) having reducing action property is injected into said reaction chamber under the pressure reduced state after the chamber is evacuated. A natural oxide film 7 on the N-type diffused layer 5 and the polysilicon layer 3 is chemically removed by a vapor phase reaction based on high frequency excitation caused by the heating of the gas. Then gas (e.g., tungsten hexafluoride and silane gas) for depositing a wiring metal 8 is introduced in the same reaction chamber, in which the natural oxide film is removed, and reaction is made to continue by a CVD method until the specified thickness is obtained. Finally, patterning is performed, and the wiring process is completed.
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