JUNCTION SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PURPOSE:To efficiently utilize the lights in the vertical direction by a method wherein the P-N junction only in the vertical direction substantially emits light by forming the surface of the flat plate part or its vicinity as an insulative part. CONSTITUTION:A light-emitting element has P side electrodes E1 provided on a side circumferential surface of a cylindrical protrusion P and a top of a flat plate part B and an N-type side electrode 2 provided on a lower surface of the flat plate part B. A cylindrical P-N junction PN1 (extendedly provided in the vertical direction to the flat plate part B exists in the cylindrical protrusion P, a P-N junction PN2 extendedly provided in the parallel direction exists in the flat plate part B and an insulating layer 10 is interposed between the top of the flat plate part B and the electrode E1. When an electrode is injected between the electrode E1 and the electrode E2, a current flows in a circuit C1, but a current does not flow in a circuit C2 which penetrates the P-N junction PN2 from the electrode E1 on the top of the flat plate part B and reaches the electrode E2 because the insulating layer 10 is interposed. Thereby, the lights are substantially emitted only in the vertical direction to the flat plate part B by the P-N junction PN1 and the P-N junction PN2 does not contribute to light- emission.