| 摘要 |
PURPOSE:To treat a substrate in a short time, in a method for removing a film from a substrate on which an organic film is formed, by heating the substrate to be treated from its lower part in a housing, which forms a reacting chamber, and jetting high-concentration compressed ozone on the surface of the substrate through small holes in a cooled nozzle. CONSTITUTION:In a housing 1, there is a substrate supporting device 2, on which a substrate to be treated 3 is mounted. A heater 4 is provided at a lower part thereof. A high concentration ozone feeder pipe 5 is provided in the housing and surrounded by a cooling pipe 6. The ozone feeder pipe is connected to a plurality of nozzles 7, through which ozone is jetted on the semiconductor surface. A small hole is provided in each nozzle so as to penetrate the cooling pipe 6. As the materials for constituting the housing, the ozone feeder pipe, the nozzles and the like, various material such as stainless steel can be used when material has corrosion resistance against ozone. The configuration of a refrigerant feeding pipe can be a circular cylinder shape, a rectangular shape and the like. The number of nozzles can be set appropriately in correspondence with the size of the substrate to be treated. |
