| 摘要 |
PURPOSE:To improve the insulating film covering property by filling mesa grooves flatly by a method wherein both sides of current flowing region including light emitting region are encircles with resin base insulating film. CONSTITUTION:An N-InP layer as a buffer layer and a P-InP layer 2 as a block layer are successively grown on a semiconductor substrate 1. Then a V groove is formed on the P-InP layer 2 from the surface thereof to the point reaching the N-InP substrate 1. Next, an N-InP layer 3 as a closing layer, on InGaAsP layer 4 as an active layer, a P-InP layer 5 as another closing layer and a P-InGaAsP layer 6 as a control layer are successively grown. To reduce the laser capacity, mesa grooves 7 reaching the N-InP substrate 1 are formed on both sides of the V groove. After coating the overall surface with e.g. a polyimide base resin film 9 as a resin base insulating film to be baked in nitrogen atmosphere for hardening process. Through this process, the mesa grooves 7 are completely filled with the resin 9 to flatten the substrate 1 while the resin 9 becomes a thermally stable insulating film so that the insulating film may be prevented from breaking down at the shoulders of mesa grooves 7 as well as electrode patterns from being damaged by e.g. disconnection etc.
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