| 摘要 |
PURPOSE:To form a gate electrode in a self-matching manner using a metal as well as to markedly improve the working speed of a microscopic field-effect transistor by a method wherein the gate electrode is formed after a drain and source diffusion layer has been formed. CONSTITUTION:First, an oxide film 2 to be used for isolation is formed on a P-type silicon substrate 1 using a selective oxidizing method. Then, the polysilicon 3 containing phosphorus of N-type impurities is deposited by performing a depressurized chemical vapor deposition (CVD) method. Subsequently, the part on the gate region of the polysilicon is removed by performing a dry etching using a photoresist as a mask. Then, a drain diffusion layer 4 and a source diffusion layer 5 are formed by diffusing phosphorus from the polysilicon on the silicon substrate 1 located directly below the polysilicon, and a gate oxide film 6 and an insulating oxide film 7 are formed. Subsequently, after aluminum has been vapor-deposited by performing a sputtering method, a gate electrode 8 is formed by performing a dry etching using the photoresist as a mask in such a manner that the part covering the polysilicon groove located on the gate region is left.
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