发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent short circuit faults due to cracks in a dielectric layer caused by heat history and the like in capacitors between wiring layers, by dividing pairs of electrodes, which comprise different wiring material layers, into a plurality of regions, which are electrically connected with each other. CONSTITUTION:Capacitors, which have capacitance of about 10pF, are divided into, e.g., 24 unit lower electrodes 3a-3x and unit upper electrodes 7a-7x of 100mum square. The electrodes 3a-3x are mutually connected with a lower electrode interconnection wiring 4 using a lower aluminum wiring layer and aligned in a matrix shape on a field SiO2 film 2. A PSG interlayer insulating film 6, which functions as a dielectric layer, is simultaneously formed together with other regions such as transistor arranging regions on the arranging region of the electrodes 3a-3x. The 24 upper unit electrodes 7a-7x, which are divided into the size of 100mum square like the lower electrodes, are mutually connected with an upper electrode interconnection wiring 8 using an upper aluminum wiring layer. Under this state, the upper electrodes are arranged in a matrix shape so as to face the electrodes 3a-3x.
申请公布号 JPS62137851(A) 申请公布日期 1987.06.20
申请号 JP19850279642 申请日期 1985.12.12
申请人 FUJITSU LTD 发明人 KUDO OSAMU;UCHIDA TETSUO
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项
地址