| 摘要 |
PURPOSE:To improve the sensitivity of a photoconductive type infrared ray detector by a method wherein a fixed number of narrow voltage measuring electrodes, having a highly-doped region on the circumference, are provided on the edge of the light-receiving part located in the vicinity of the other electrodes of fixed number, to be used to run a bias current, on the part separated from the latter, and the noise generated on the two electrodes used to run the bias current is suppressed. CONSTITUTION:Besides electrodes 1 and 2, narrow voltage measuring electrodes 3 and 4 which are separated from said two electrodes are provided on the edge of a light-receiving part 5 located in the vicinity of said electrodes on the circumference of a highly-doped region 11 in order to prevent the shortening of life of the excessive minority carrier. At this time, the amperage 1/f noise caused by the recombination of the carrier can be prevented by the electrodes 1 and 2 by picking out the potential difference between narrow voltage measuring electrodes 3 and 4 having highly-doped region 11 on the circumference, and the shortening of life of the excessive minority carrier can also be prevented.
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