| 摘要 |
PURPOSE:To grow an epitaxial film having high quality at a low temperature by bringing plasma acquired by discharging a gas containing at least one kind or more of semiconductor constituents into contact with a single crystal substrate existing in the same vessel and growing generated semiconductor elements so as to equalize to the crystal orientation of the single crystal substrate. CONSTITUTION:A gas having corrosiveness to Si is made to flow into a vacuum vessel 10 through a flowmeter 16 and a valve 15 from a gas cylinder 17. The gas is discharged by the action of microwaves generated by a magnetron 1 and introduced up to a discharge tube 5 and electromagnets 6. When there is magnetic field intensity of 875 Gauss in some region in the discharge tube at that time, an electronic cyclotron resonance phenomenon is generated, and plasma 8 having high density is acquired. The plasma is transported up to a single crystal substrate 7 oppositely faced to the discharge tube as it is left as it is throttled by a magnetic field. Discharge is stopped and the supply of HCl gas is suspended, the inside of the vessel is evacuated again, a gas 14 containing Si is made to flow, and epitaxial growth is conducted.
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