| 摘要 |
PURPOSE:To join a metallic wire and an electrode excellently without damaging the electrode and a semiconductor chip, and to use the metallic wire, cost thereof is low, in place of a gold wire by conducting the ball formation and ball bonding of the metallic wire in an inert-gas atmosphere. CONSTITUTION:Argon gas is fed into a shielding cover 12 and an inert-gas atmosphere 13 is formed in the shielding cover 12, and high voltage is applied between a copper wire 10 and a discharge electrode 11 in the inert-gas atmosphere 13. Consequently, discharge is generated between the copper wire 10 and the discharge electrode 11 and an arc 14 is shaped, and the tip of the copper wire 10 is given heat and a ball 10a is formed. As a result, when the ball 10a is shaped, the ball 10a is pushed against an aluminum electrode 3 for a semiconductor chip 2 by using a capillary chip 5 in the inert-gas atmosphere 13, and ultrasonic vibrations are applied to the ball 10a. Accordingly, since the ball 10a is deformed and the ball 10a and the aluminum electrode 3 are joined, another tip of the copper wire 10 is switch-bonded with a lead 4. |
