| 摘要 |
PURPOSE:To improve a photoelectric conversion efficiency and make the thickness and the quality of a photoelectric conversion layer uniform by a method wherein gaseous raw materials and a gaseous oxidant which has a property to oxidize the gaseous raw material are respectively introduced into a film forming space through separated supply paths and chemically contacted with each other. CONSTITUTION:A glass plate on which an SnO2 film is formed by a heat CVD method is used as a substrate. The substrate is put on a substrate holder 212 in a vacuum chamber 220 and the vacuum chamber 220 is sufficiently evacuated. Then the substrate is heated by a heater 213 until the substrate temperature reaches 250 deg.C and maintained at that temperature. SiH4 gas and CH4 gas as gaseous raw materials, B2H6 gas diluted with He as a P-type impurity introducing raw material and F2 gas as a gaseous oxidant are introduced into the vacuum chamber 220 through gas introducing tubes 210. At the same time, He gas is introduced into the vacuum chamber to set a pressure at 0.8Torr. By keeping the substrate in these conditions for 4min, a P-type amorphous SiC:H:F:B semiconductor layer with a thickness of about 300Angstrom is formed on the SnO2 film. Further, an I-type amorphous Si:H:F semiconductor layer with a thickness of about 5,000Angstrom is formed on it by SiH4 gas and F2 gas and, finally, an I-type amorphous Si:H:F:P semiconductor layer with a thickness of about 500Angstrom is formed by SiH4 gas, PH3 gas and F2 gas. With this constitution, a photoelectric conversion layer composed of three semiconductor layers is formed on the substrate. |
