| 摘要 |
PURPOSE:To obtain the titled resist having an improved resolution and heat- resisting property by composing a novolak resin of a polycondensation product of paratertiary butylphenol and formaldehyde or paraphenylphenol and formaldehyde. CONSTITUTION:The titled resist comprises a diazonaphthoguinone sulfonic acid ester compd. of the novolak resin as the main component. Said novolak resin comprises the polycondensation product of paratertiary butylphenol and formaldehyde or paraphenylphenol and formaldehyde. The titled resist is formed by coating an org. solvent solution of the photoresist on the substrate to form the resist film. The negative pattern is formed by developing said resist coated film with radiating an ionizing radiation followed by dissolving selectively the obtd. resist pattern with an org. solvent to separate the radiated part and the non-radiated part. As the obtd. negative resist does not swell, and has the high resolution and heat-resisting property, the obtd. pattern does not deform while backing. |
