| 摘要 |
PURPOSE:To join a metallic wire and an electrode excellently without damaging the electrode and a semiconductor chip by conducting the ball formation, ball bonding and switch bonding of the metallic wire in an inert-gas atmosphere. CONSTITUTION:When argon gas is fed into a shielding cover 12 and an inert-gas atmosphere 13 is formed in the shielding cover 12 and high voltage is applied between a copper wire 10 and a discharge electrode 11 in the inert-gas atmosphere 13, discharge is generated between the copper wire 10 and the discharge electrode 11 and an arc 15 is shaped, and the tip of the copper wire 10 is given heat and a ball 10a is formed. The ball 10a is pushed against an aluminum electrode 3 for a semiconductor chip 2 by using a capillary chip 5 in the inert- gas atmosphere 13, and ultrasonic vibrations are applied to the ball 10a and the ball 10a and the aluminum electrode 3 are joined. Another tip of the copper wire 10 is pushed against a lead 14 by employing the capillary chip 5 in the inert-gas atmosphere 13, and ultrasonic vibrations are applied to the lead 14 and the copper wire 10 is switch-bonded with the lead 14. |
