发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To join a metallic wire and a discharge electrode excellently without damaging the electrode and a semiconductor chip by using a cylindrical member having a small diameter as the discharge electrode employed for ball formation when conducting the ball formation and ball bonding of the metallic wire in an inert-gas atmosphere. CONSTITUTION:An inert-gas atmosphere 13 is formed, a cylindrical discharge electrode 11 having a small diameter is inserted into the inert-gas atmosphere 13, and high voltage is applied between a copper wire 10 and the discharge electrode 11 in the atmosphere 13. Consequently, discharge is generated between the copper wire 10 and the discharge electrode 11 and an arc 12 is shaped, and the tip of the copper wire 10 is given heat and a ball 10a is formed. As a result, when the ball 10a is shaped, the discharge electrode 11 is taken out of the inside of the inert-gas atmosphere 13 while the ball 10a is pushed against an aluminum electrode 3 for a semiconductor chip 2 by using a capillary chip 5 in the atmosphere 13, and ultrasonic vibrations having 0.1mum amplitude are applied to the ball 10a. Accordingly, since the ball 10a is deformed and the ball 10a and the aluminum electrode 3 are joined, another tip of the copper wire 10 is switch-bonded with a lead 4.
申请公布号 JPS62136834(A) 申请公布日期 1987.06.19
申请号 JP19850278644 申请日期 1985.12.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIROTA SANEYASU;MACHIDA KAZUMICHI;SUGIMURA TOSHIHARU;SHIMOTOMAI MASAAKI;OMAE SEIZO
分类号 H01L21/60 主分类号 H01L21/60
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