| 摘要 |
PURPOSE:To form a magnetic and electric separation layer, and obtain a magnetic film of a thick-film type which has high permeability, by forming a magnetic film on a wafer by means of sputtering or vapor deposition of magnetic material in a magnetic field, forming a separation layer by means of oxidizing or nitriding of the film surface, and repeating the sputtering or vapor deposition of magnetic material on the surface of the separation layer to form a magnetic film of a thick-film type. CONSTITUTION:A wafer 1 is set between magnets 2 and 3 on a fixing jig 4 in the direction wherein magnetic anisotropy is to be imparted. The axial direction of easy magnetization is shown by an arrow. The fixing jig 4 is set in a sputtering apparatus or deposition apparatus, and permalloy is sputtered or deposited. The film thickness is controlled by a monitor. After the sputtering or deposition, the fixing jig 4 is set as tit is, in an O2 plasma etchant (IPC-3000, for example), and plasma asher of 200W is performed for 30min in O2 at 0.5atm. Then the fixing jig 4 is again set in the sputtering apparatus or deposition apparatus, and permalloy is sputtered or deposited.
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