| 摘要 |
PURPOSE:To improve the integrating density of a capacitor without reducing a capacity by forming a second capacitor on a first capacitor. CONSTITUTION:DOPOS films 10, 11 are formed through an insulating film 9 on a polycrystalline Si film 6 for forming electrodes of capacitors 7, 8 to form capacitors 12, 13 on the capacitors 7, 8. Accordingly, a cell area can be effectively reduce to approx. 1/2 as compared with a planar type memory cell without reducing the area of the capacitor, and the integrating density of the capacitor and hence the cell can be enhanced without reducing the capacity of the capacitor. Since the integrating density can be improved without reducing the capacity of the capacitor, software error due to alpha-ray or a noise is eliminated, and a high integration and high density dynamic RAM having short access time can be obtained. |
