| 摘要 |
PURPOSE:To simplify manufacturing steps and to accurately form two types of impurity regions at desired positions by varying the shapes of a first conductor layer and an insulating film on the first layer before and after forming the first impurity region to form two types of deep and shallow impurity regions in a self-aligning manner without sidewall. CONSTITUTION:A first polycrystalline silicon layer 14 is grown on a P-type silicon substrate 11, patterned, a silicon oxide film 16 is grown, a second polycrystalline silicon layer 17 is further laminated thereon, patterned, and reverse conductivity type impurity to the substrate is implanted to form deep source and drain regions 19. Subsequently, the film 16 and the layer 14 are selectively removed by etching in a self-aligning manner, reverse conductivity type impurity to the substrate is ion implanted in a shallow depth in a self- aligning manner with first and second polycrystalline silicon layer to form shallow source drain regions 20, a contacting hole is opened, and metal wirings such as amine wirings 22 are formed.
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