| 摘要 |
<p>PURPOSE:To prevent a wiring conductor from being broken or short-circuited without any decrease in opening rate by forming thin film diodes at the nearly opposite positions on a picture element electrode and a row electrode or column electrode, and connecting both diodes between the picture element electrode and row or column electrode in reverse parallel relation. CONSTITUTION:ITO is formed on a glass plate 1 by an electron beam vapor- depositing method to an about 700Angstrom thickness and then patterned to form the picture element electrode 2 and row electrode 3 (or column electrode). Chromium layers 61 and 63 are formed by the electron beam vapor-depositing method to an about 1,000Angstrom thickness and an amorphous silicon layer 5 between them has PIN structure and is formed to a 5,000Angstrom total film thickness; and those chromium layers 61 and 63 and amorphous silicon layer 5 are patterned. Thus, one stage of a diode 51 is formed and then a silicon nitride film is formed as an insulating film 7 to an about 200Angstrom thickness, and aluminum is formed as a wiring conductor 8 to an about 2,000Angstrom thickness. Consequently, the effective height of the diode decreases and the step is also reduced, so defect generation such as the breaking of wiring and short-circuiting is reduced greatly and a decrease in opening rate is suppressed.</p> |
