| 摘要 |
PURPOSE:To increase a surface strength of a wafer by surface treating the wafer by superposing a plurality of wafers before etching and contacting only chambered portions of the wafers with an etchant, thereby treating the chambered surfaces of the wafers to be hardly damaged such as cracked or deformed. CONSTITUTION:An etchant (a) is supplied from a pipe 8 into a treating tank 6 in which a plurality of silicon wafers A are grasped. Then, a driving motor 18 is driven to rotate chucks 11, 12, thereby contacting the chamfered portions 2, 2 of the wafers A uniformly along the circumferential direction with the etchant (a). The etchant (a) is exhausted from the tank 6 in which the chamfered portions 2, 2 of the wafers are surface treated, pure water (c) is supplied to clean and remove the remaining etchant (b), supplied until the entire wafers A are dipped, a wafer gripper 10 is then rotated to remove the remaining etchant (b) adhered to the surfaces of the chamfered portions 2, 2 of the wafers. Further, the pure water (c) is continuously supplied to allow the pure water (c) (cleaning and exhausting) including the remaining etchant (b) to overflow. Then, the wafers A are removed from the gripper 10, drained, and dried.
|
