| 摘要 |
<p>PURPOSE:To stabilize quality by enhancing chemical resistance and eliminating the deterioration of a heat generating resistor film, by forming a Si-film to the uppermost layer of the heat generating resistor film provided on an insulating substrate and forming a electrode film and an anti-wear layer on said Si-film. CONSTITUTION:A heat generating resistor film 2 containing TiC and SiO2 is formed on an insulating substrate 1 and, succeedingly, 99.99% polysilicon is used as a source to deposit a Si-film 6 with a thickness of 10-200Angstrom by EB vapor deposition. Then, an electrode film 3 consisting of a lower Cr-layer and an upper Cu-layer is formed thereon. Next, a heat generating part 5 is exposed by photoetching the electrode film 3 and an anti-wear film 4 is further formed. As mentioned above, by depositing Si on the upper layer of the heat generating resistor film in a thickness of 10-200Angstrom , a compound with oxygen is formed to partially convert Si to SiO2 to allow SiO2 to be useful for preventing the oxidation of the heat generating resistor film. When the electrode film of the heat generating part area is removed by photoetching, a part of Si is allowed to remain to protect the heat generating resistor film of the heat generating part area and useful for preventing the thickness reduction of the heat generating resistor film.</p> |
