发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To compensate the lowering of reliability due to a large number of rewriting by incorporating a memory rewriting-number memory means and automatically refreshing contents every time memories exceed some number of rewriting. CONSTITUTION:When an address signal is inputted to an address input circuit 12, an arbitrary cell on a memory matrix 11 can be selected through an address buffer latch circuit 13, an X decoder 14 and a Y decoder 15. A data is inputted and outputted through a data input/output circuit 16 and an input/output buffer latch circuit 17. A nonvolatile memory counter 21 previously memorizes the number of rewriting every time memories are rewritten, and refreshes memory contents in the memory through a refresh control circuit 22 every time the number of rewriting exceeds set number. A memory cell, the threshold thereof varies by use for a prolonged time, can be returned forcibly to the normal state of 1 or 0, and malfunction can be prevented.</p>
申请公布号 JPS6074578(A) 申请公布日期 1985.04.26
申请号 JP19830180513 申请日期 1983.09.30
申请人 TOSHIBA KK 发明人 ITOU YASUO
分类号 H01L27/112;G11C11/406;G11C16/02;G11C17/00;H01L21/8246;H01L21/8247;H01L27/10;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L27/112
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