发明名称 |
Integrated MOS transistors having a gate metallization composed of tantalum or niobium or their silicides |
摘要 |
Chemical reactions between a tantalum or tantalum silicide metallization layer and an underlying thin gate oxide are avoided by the interposition of an intermediate layer of oxygen-doped tantalum or tantalum silicide whose thickness amounts to about 1/20 to 1/5 of the layer thickness of the entire gate metallization. The metallization layer is produced by high-frequency sputtering in which oxygen is added at the beginning of the process and argon is used as a sputtering gas. Low specific resistance values are accomplished by means of this gate metallization.
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申请公布号 |
US4673968(A) |
申请公布日期 |
1987.06.16 |
申请号 |
US19860866951 |
申请日期 |
1986.05.27 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HIEBER, KONRAD;NEPPL, FRANZ |
分类号 |
H01L29/78;H01L21/28;H01L21/3205;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):H01L23/48 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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