DEVICE AND METHOD FOR FORMING CHEMICAL VAPOR DEPOSITED THIN FILM

摘要

PURPOSE:To prevent a floating foreign material from being stuck on the surface of a wafer by making both the pressure of a reaction chamber and the pressure of an N2 purge chamber same pressure and communicating both chambers in such a case that film forming reaction is finished in the inside of a reaction furnace and the wafer is freshly loaded. CONSTITUTION:In a device for forming a chemical vapor deposited thin film wherein an N2 purge chamber 6 for a wafer load is successively connected to a reaction furnace 1 via a gate valve 7, the film is formed on a wafer 5 by sending a reaction gas and an N2 carrier gas through the introduction pipes 8, 9 to a reaction furnace 1 and regulating the pressure of the inside of the furnace by means of an exhaust system 12. In case of opening the gate valve 7 which successively connects the reaction furnace 1 to the N2 purge chamber 6 after film formation is finished, an exhaust pump P is driven by opening the damper 18 of the exhaust system 12 and the floating foreign materials of the inside of the furnace are discharged to the outside of the furnace and also the pressure of the reaction furnace 1 is made to same pressure as the pressure of the N2 purge chamber 6. Thereby the floating foreign materials are prevented from being stuck on the surface of the wafer which is packaged in the N2 purge chamber 6 and allowed to react thereafter.