| 摘要 |
PCT No. PCT/JP83/00303 Sec. 371 Date May 9, 1984 Sec. 102(e) Date May 9, 1984 PCT Filed Sep. 9, 1983 PCT Pub. No. WO84/01076 PCT Pub. Date Mar. 15, 1984.A semiconductor image sensor is formed by static induction transistors, each provided with a control gate region which is a first gate region for control use and a shielding gate region which is a second gate region. The distance between an n+ source region and the control gate region is larger than the distance between the n+ source region and the shielding gate region. It is also possible to adopt such a structure that a light-shielding mask is provided on the shielding gate region. The isolation of adjacent photoconductive cells and the integration of adjacent photoconductive cells are improved, and the integration density is sharply increased.
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