发明名称 |
Fabrication of metal lines for semiconductor devices |
摘要 |
A method of fabricating MESFET devices having a submicron line gate electrode is disclosed. The method includes the formation of a single layer of resist material on a semiconductor surface; formation of a resist cavity through optical lithography, the cavity exposing a selected portion of the semiconductor surface; depositing by way of angled evaporation at least one gate wall within said resist cavity, the gate wall defining a shaped gate cavity; depositing gate electrode material within the gate cavity, and removing the resist material. In one embodiment of the invention the gate wall is removed from the gate electrode material, leaving a free-standing electrode. In another embodiment, the gate wall is a permanent part of the electrode structure.
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申请公布号 |
US4673960(A) |
申请公布日期 |
1987.06.16 |
申请号 |
US19850760786 |
申请日期 |
1985.07.31 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
CHAO, PANE-CHANE;KU, WALTER H. |
分类号 |
H01L21/027;H01L21/285;H01L21/338;(IPC1-7):H01L29/48;H01L23/50;H01L29/44;H01L29/80 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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